KP1000A/2800v ********************************************************************************************************** high power thyristor for phase control applications features: . all diffused structure . center amplifying gate configuration . guaranteed maximum turn-off time . high dv/dt capability . pressure assembled device electrical characteristics and ratings blocking - off state device type v rrm (1) v drm (1) v rsm (1) KP1000A 2800 2800 2900 v rrm = repetitive peak reverse voltage v drm = repetitive peak off state voltage v rsm = non repetitive peak reverse voltage (2) repetitive peak reverse leakage and off state leakage i rrm / i drm 10 ma 100 ma (3) critical rate of voltage rise dv/dt (4) 500 v/ sec conducting - on state parameter symbol min. max. typ. units conditions average value of on-state current i t(av) 1000 a t c =93 o c rms value of on-state current i trms 2000 a nominal value peak one cpstcle surge (non repetitive) current i tsm 20000 18000 a a 8.3 msec (60hz), sinusoidal wave- shape, 180 o conduction, t j = 125 o c 10.0 msec (50hz), sinusoidal wave- shape, 180 o conduction, t j = 125 o c i square t i 2 t 1.7x10 6 a 2 s 8.3 msec and 10.0 msec latching current i l 800 ma v d = 24 v; r l = 12 ohms holding current i h 400 ma v d = 24 v; i = 2.5 a peak on-state voltage v tm 2.15 v i tm = 3200 a; critical rate of rise of on-state current (5) di/dt 200 a/ s switching from v drm 1000 v, non-repetitive KP1000A/2800v gating notes: all ratings are specified for tj=25 o c unless otherwise stated. (1) all voltage ratings are specified for an applied 50hz/60zhz sinusoidal waveform over the temperature range -40 to +125 o c. (2) 10 msec. max. pulse width (3) maximum value for tj = 125 o c. (4) minimum value for linear and exponential waveshape to 80% rated v drm . gate open. tj = 125 o c. (5) non-repetitive value.
parameter symbol min. max. typ. units conditions peak gate power dissipation p gm 200 w t p = 40 us average gate power dissipation p g(av) 5 w peak gate current i gm 10 a gate current required to trigger all units i gt 300 150 125 ma ma ma v d = 6 v;r l = 3 ohms;t j = -40 o c v d = 6 v;r l = 3 ohms;t j = +25 o c v d = 6 v;r l = 3 ohms;t j = +125 o c gate voltage required to trigger all units v gt 0.30 5 3 v v v v d = 6 v;r l = 3 ohms;t j = -40 o c v d = 6 v;r l = 3 ohms;t j = 0-125 o c v d = rated v drm ; r l = 1000 ohms; t j = + 125 o c peak negative voltage v grm 5 v dynamic parameter symbol min. max. typ. units conditions delay time t d 1.5 0.7 s i tm = 50 a; v d = rated v drm gate pulse: v g = 20 v; r g = 20 ohms; t r = 0.1 s; t p = 20 s turn-off time (with v r = -50 v) t q 500 250 s i tm = 1000 a; di/dt = 25 a/ s; v r -50 v; re-applied dv/dt = 20 v/ s linear to 80% v drm ; v g = 0; t j = 125 o c; duty cpstcle 0.01% reverse recovery charge q rr * c i tm = 1000 a; di/dt = 25 a/ s; v r -50 v * for guaranteed max. value, contact factory. thermal and mechanical characteristics and ratings parameter symbol min. max. typ. units conditions operating temperature t j -40 +125 o c storage temperature t stg -40 +150 o c thermal resistance - junction to case r (j-c) 0.025 0.050 o c/w double sided cooled single sided cooled thermal resistamce - case to sink r (c-s) 0.010 0.020 o c/w double sided cooled * single sided cooled * mounting force p 20 24 kn * mounting surfaces smooth, flat and greased note : for case outline and dimensions, see case outline drawing in page 4 of this technical data
a: 47 mm b: 74 mm c: 66 mm e: 26 mm add:room303 weiheng building no.20 b area lanyuan wangyue rd, yangzhou jiangsu p.r.c 225000 contact person john chang, sam chou tel: +86-514-8778 2298,8778 2296 fax:+86-514-8778 2297, 8736 7519 pst@globalsources.com, positioning@china.com yzforever@163.net pst@pst888.com msn id: john_chang_370@hotmail.com skype id : yzforever0313 marketing web site:www.pst888.com www.yzpst.net http://positioning.en.alibaba.com/ http://pst.manufacturer.globalsources.com/si/6008819407498/homepage.htm
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